K3N4C1000D-TC

K3N4C1000D-TC(E) 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(word mode) Fast access time : 100ns(Max.) Supply voltage : single +5V Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) Fully static operation All inputs and outputs TTL compatible Three state outputs Package -. K3N4C1000D-TC(E) : 44-TSOP2-400 CMOS MASK ROM GENERAL DESCRIPTION The K3N4C1000D-TC(E) is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x8 bit(byte mode) or as 524,288 x16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with a 5V single power supply, and all inputs and outputs are TTL compatible. Because of its asynchronous operation, it requires no external clock assuring extremely easy operation. It is suitable for use in program memory of microprocessor, and data memory, character generator. The K3N4C1000D-TC(E) is packaged in a 44-TSOP2. FUNCTIONAL BLOCK DIAGRAM PRODUCT INFORMATION Product K3N4C1000D-TC K3N4C1000D-TE Operating Temp Range 0°C~70°C -20°C~85°C Vcc Range (Typical) 5.0V Speed (ns) 100 A18 . . . . . . . . A0 A-1 X BUFFERS AND DECODER MEMORY CELL MATRIX (524,288x16/ 1,048,576x8) Y BUFFERS AND DECODER SENSE AMP. DATA OUT BUFFERS PIN CONFIGURATION N.C A18 A17 A7 A6 A5 A4 A3 1 2 3 4 5 6 7 8 44 N.C 43 N.C 42 A8 41 A9 40 A10 39 A11 38 A12 37 A13 36 A14 35 A15 34 A16 ...