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IS62WV51216ALL Dataheets PDF



Part Number IS62WV51216ALL
Manufacturers Integrated Silicon Solution
Logo Integrated Silicon Solution
Description ULTRA LOW POWER CMOS STATIC RAM
Datasheet IS62WV51216ALL DatasheetIS62WV51216ALL Datasheet (PDF)

IS62WV51216ALL IS62WV51216BLL 512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DECEMBER 2007 FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V VDD (62WV51216ALL) – 2.5V--3.6V VDD (62WV51216BLL) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial temperature av.

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IS62WV51216ALL IS62WV51216BLL 512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM DECEMBER 2007 FEATURES • High-speed access time: 45ns, 55ns • CMOS low power operation – 36 mW (typical) operating – 12 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V VDD (62WV51216ALL) – 2.5V--3.6V VDD (62WV51216BLL) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • Lead-free available DESCRIPTION The ISSI IS62WV51216ALL/ IS62WV51216BLL are high- speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1 is LOW, CS2 is HIGH and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS62WV51216ALL and IS62WV51216BLL are packaged in the JEDEC standard 48-pin mini BGA (7.2mm x 8.7mm) and 44-Pin TSOP (TYPE II). FUNCTIONAL BLOCK DIAGRAM A0-A18 DECODER 512K x 16 MEMORY ARRAY VDD GND I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte I/O DATA CIRCUIT COLUMN I/O CS2 CS1 OE CONTROL WE CIRCUIT UB LB Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 1 Rev. D 12/13/2007 IS62WV51216ALL, IS62WV51216BLL PIN CONFIGURATIONS 48-Pin mini BGA (7.2mm x 8.7mm) 1 23 45 6 A LB OE A0 A1 A2 CS2 B I/O8 UB A3 A4 CS1 I/O0 C I/O9 I/O10 A5 A6 I/O1 I/O2 D GND I/O11 A17 A7 I/O3 VDD` E VDD I/O12 GND A16 I/O4 GND F I/O14 I/O13 A14 A15 I/O5 I/O6 G I/O15 NC A12 A13 WE I/O7 H A18 A8 A9 A10 A11 NC PIN DESCRIPTIONS A0-A18 I/O0-I/O15 CS1, CS2 OE WE LB UB NC VDD GND Address Inputs Data Inputs/Outputs Chip Enable Input Output Enable Input Write Enable Input Lower-byte Control (I/O0-I/O7) Upper-byte Control (I/O8-I/O15) No Connection Power Ground 44-Pin TSOP (Type II) A4 1 A3 2 A2 3 A1 4 A0 5 CS1 6 I/O0 7 I/O1 8 I/O2 9 I/O3 10 VDD 11 GND 12 I/O4 13 I/O5 14 I/O6 15 I/O7 16 WE 17 A16 18 A15 19 A14 20 A13 21 A12 22 44 A5 43 A6 42 A7 41 OE 40 UB 39 LB 38 I/O15 37 I/O14 36 I/O13 35 I/O12 34 GND 33 VDD 32 I/O11 31 I/O10 30 I/O9 29 I/O8 28 A18 27 A8 26 A9 25 A10 24 A11 23 A17 2 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 Rev. D 12/13/2007 IS62WV51216ALL, IS62WV51216BLL TRUTH TABLE Mode Not Selected Output Disabled Read Write WE CS1 CS2 OE LB UB XHXXXX X X L X X X X X X X HH H L H H L X H L H H X L H L H L L H H L H L H L H L H L L L L L HX L H L L HX H L L L HX L L I/O PIN I/O0-I/O7 I/O8-I/O15 High-Z High-Z High-Z High-Z High-Z High-Z High-Z High-Z High-Z High-Z DOUT High-Z DOUT High-Z DOUT DOUT DIN High-Z DIN High-Z DIN DIN VDD Current ISB1, ISB2 ISB1, ISB2 ISB1, ISB2 ICC ICC ICC ICC OPERATING RANGE (VDD) Range Ambient Temperature IS62WV51216ALL (70ns) IS62WV51216BLL (55ns, 70ns) Commercial 0°C to +70°C 1.65V - 2.2V 2.5V - 3.6V Industrial –40°C to +85°C 1.65V - 2.2V 2.5V - 3.6V IS62WV51216BLL (45ns) 3.0 - 3.6V Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 3 Rev. D 12/13/2007 IS62WV51216ALL, IS62WV51216BLL ABSOLUTE MAXIMUM RATINGS(1) Symbol Parameter Value Unit VTERM Terminal Voltage with Respect to GND –0.2 to VDD+0.3 V TBIAS Temperature Under Bias –40 to +85 °C VDD VDD Related to GND –0.2 to +3.8 V TSTG Storage Temperature –65 to +150 °C PT Power Dissipation 1.0 W Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. DC ELECTRICAL CHARACTERISTICS (Over Operating Range) Symbol Parameter Test Conditions VDD Min. Max. Unit VOH Output HIGH Voltage IOH = -0.1 .


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