MP4209

MP4209 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-π-MOSV in One) MP4209 High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver 4-V gate drivability Small package by full molding (SIP 10 pins) High drain power dissipation (4-device operation) : PT = 4 W (Ta = 25°C) Low drain-source ON resistance: RDS (ON) = 0.28 Ω (typ.) High forward transfer admittance: |Yfs| = 3.5 S (typ.) Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V) IDSS = 100 µA (max) (VDS = 100 V) Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Industrial Applications Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Drain power dissipation (1-device operation, Ta = 25°C) Drain power dissipation (4device operation, Ta = 25°C) Single pulse avalanche energy (Note 1) Avalanche current - device operation Repetitive avalanche energy (Note 2) 4device operation Channel temperature Storage temperature range DC Pulse Symbol VDSS VDGR VGSS ID IDP PD Rating 100 100 ±20 3 12 2.0 Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-25A1C Weight: 2.1 g (typ.) W PDT 4.0 W EAS IAR EAR EART Tch Tstg 140 3 0.2 mJ A mJ 0.4 150 −55 to 150 °C °C Note 1: Condition for avalanche energy (single pulse) measurement VDD = 50 V, starting Tch = 25°C, L = 20 mH, RG = 25 Ω, IAR = 3 A Note 2: Repetitive rating; pulse width limited by maximum cha...