SD1490-1
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI SD1490-1 is a Common Emitter Device Designed for Class A ...
SD1490-1
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI SD1490-1 is a Common Emitter Device Designed for Class A and AB Amplifier Applications in Television Band IV & V Transmitters.
FEATURES INCLUDE:
Gold Metalization Emitter Ballasting Internal Matching
PACKAGE STYLE .450 BAL FLG.(A) MAXIMUM RATINGS
IC VCB PDISS TJ TSTG θJC
O O
8.0 A 45 V 155 W @ TC = 25 C -55 C to +200 C -55 C to +200 C 1.15 C/W
O O O O
CHARACTERISTICS
SYMBOL
BVCEO BVCBO BVEBO hFE COB GP Gp IMD3 IC = 200 mA IC = 50 mA IE = 10 mA
TC = 25 C
TEST CONDITIONS (PER SIDE)
VCE = 5.0 V VCB = 28 V
w
w
.D w
O
t a
S a
e h
t e
U 4
.c
m o
1 = Collector 2 = Base 3 = Emitter
MINIMUM TYPICAL MAXIMUM
30 45 3.0 10 100 72 8.0 7.0 9.0 8.0
UNITS
V V V
IC = 3.0 A f = 1.0 MHz IC = 2 X 1.6 A IC = 2 X 250 mA f = 860 MHz f = 860 MHz f = 860 MHz = -16dB
VCE = 26.5 V VCE = 28 V Pout = 50 W
VISION
VCE = 26.5 V Pout = 25 W SOUND = -10 dB = -8.0dB
CHROMA
w A D V A N C E D S E M I C O N D U C T O R, I N C. w w
Specifications are subject to change without notice.
.D
a at
Sh
t e e
4U
pF
m o .c
---
dB dB
-45
dBc
REV. A
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
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