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SKIIP21NAB06

Semikron

IGBT POWER MODULE

SKiiP 21 NAB 06 - SKiiP 21 NAB 06 I Absolute Maximum Ratings Symbol Conditions 1) Values 600 ± 20 27 / 19 54 / 38 36 / 2...


Semikron

SKIIP21NAB06

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SKiiP 21 NAB 06 - SKiiP 21 NAB 06 I Absolute Maximum Ratings Symbol Conditions 1) Values 600 ± 20 27 / 19 54 / 38 36 / 24 72 / 48 800 25 370 680 – 40 . . . + 150 – 40 . . . + 125 2500 Units V V A A A A V A A A2s °C °C V Inverter & Chopper VCES VGES IC Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C ICM Theatsink = 25 / 80 °C IF = –IC IFM = –ICM tp < 1 ms; Theatsink = 25 / 80 °C Bridge Rectifier VRRM Theatsink = 80 °C ID IFSM tp = 10 ms; sin. 180 °, Tj = 25 °C tp = 10 ms; sin. 180 °, Tj = 25 °C I2t Tj Tstg Visol AC, 1 min. MiniSKiiP 2 SEMIKRON integrated intelligent Power SKiiP 21 NAB 06 SKiiP 21 NAB 06 I 3) 3-phase bridge rectifier + braking chopper + 3-phase bridge inverter Case M2 Characteristics Symbol Conditions 1) IGBT - Inverter & Chopper IC = 20 A Tj = 25 (125) °C VCEsat VCC = 300 V; VGE = ± 15 V td(on) tr IC = 20 A; Tj = 125 °C td(off) Rgon = Rgoff = 47 Ω tf inductive load Eon + Eoff Cies VCE = 25 V; VGE = 0 V, 1 MHz Rthjh per IGBT Diode 2) - Inverter & Chopper VF = VEC IF = 25 A Tj = 25 (125) °C VTO Tj = 125 °C rT Tj = 125 °C IF = 25 A, VR = – 300 V IRRM diF/dt = – 500 A/µs Qrr Eoff VGE = 0 V, Tj = 125 °C per diode Rthjh Diode - Rectifier VF IF = 25 A, Tj = 25 °C Rthjh per diode Temperature Sensor T = 25 / 100 °C RTS Shunts (SKiiP 21 NAB 06 I) Rcs(dc) 5 % 4) Rcs(ac) 1% m o .c U 4 t e e h S a t a .D w w w min. – – – – – – – – typ. max. Units 2,1(2,2) 2,7(2,8) V 40 80 ns 70 140 ns 250 370 ns 500 750 ns 2,5 – mJ 1,1 – nF – 1,7 K/W UL recognized file no. E...




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