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K4S281632F-Uxx Dataheets PDF



Part Number K4S281632F-Uxx
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description 128Mb F-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
Datasheet K4S281632F-Uxx DatasheetK4S281632F-Uxx Datasheet (PDF)

SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM 128Mb F-die SDRAM Specification m o .c U 4 54 TSOP-II with Pb-Free t e (RoHS compliant) e h S a t a .D w Revision 1.2 w August 2004 w * Samsung Electronics reserves the right to change products or specification without notice. m o .c U 4 t e e h S a Rev. at1.2 August 2004 .D w w w SDRAM 128Mb F-die (x4, x8, x16) Revision History Revision 1.0 (January, 2004) - First release. Revision 1.1 (May, 2004) • Added Note 5. sentense of tRDL parameter. Revis.

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SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM 128Mb F-die SDRAM Specification m o .c U 4 54 TSOP-II with Pb-Free t e (RoHS compliant) e h S a t a .D w Revision 1.2 w August 2004 w * Samsung Electronics reserves the right to change products or specification without notice. m o .c U 4 t e e h S a Rev. at1.2 August 2004 .D w w w SDRAM 128Mb F-die (x4, x8, x16) Revision History Revision 1.0 (January, 2004) - First release. Revision 1.1 (May, 2004) • Added Note 5. sentense of tRDL parameter. Revision 1.2 (August, 2004) • Corrected typo. CMOS SDRAM Rev. 1.2 August 2004 SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM 8M x 4Bit x 4 Banks / 4M x 8Bit x 4 Banks / 2M x 16Bit x 4 Banks SDRAM FEATURES • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation • DQM (x4,x8) & L(U)DQM (x16) for masking • Auto & self refresh • 64ms refresh period (4K Cycle) • 54 TSOP(II) Pb-free Package • RoHS compliant GENERAL DESCRIPTION The K4S280432F / K4S280832F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Ordering Information Part No. K4S280432F-UC(L)75 K4S280832F-UC(L)75 K4S281632F-UC(L)60/75 Orgainization 32M x 4 16M x 8 8M x 16 Max Freq. 133MHz 133MHz 166MHz Interface LVTTL LVTTL LVTTL Package 54pin TSOP(II) 54pin TSOP(II) 54pin TSOP(II) Organization 32Mx4 16Mx8 8Mx16 Row Address A0~A11 A0~A11 A0~A11 Column Address A0-A9, A11 A0-A9 A0-A8 Row & Column address configuration Rev. 1.2 August 2004 SDRAM 128Mb F-die (x4, x8, x16) Package Physical Dimension CMOS SDRAM 0~8°C 0.25 TYP 0.010 #54 #28 0.45~0.75 0.018~0.030 0.05 MIN 0.002 ( 0.50 ) 0.020 11.76±0.20 0.463±0.008 #1 22.62 MAX 0.891 22.22 0.875 0.10 MAX 0.004 ( 0.71 ) 0.028 ± 0.10 ± 0.004 #27 0.21 0.008 ± 0.05 ± 0.002 1.00 0.039 ± 0.10 ± 0.004 0.30 -0.05 0.004 0.012 + -0.002 +0.10 0.80 0.0315 54Pin TSOP Package Dimension 10.16 0.400 0.125+0.075 -0.035 0.005+0.003 -0.001 1.20 MAX 0.047 Rev. 1.2 August 2004 SDRAM 128Mb F-die (x4, x8, x16) FUNCTIONAL BLOCK DIAGRAM CMOS SDRAM I/O Control LWE LDQM Data Input Register Bank Select 8M x 4 / 4M x 8 / 2M x 16 Sense AMP 8M x 4 / 4M x 8 / 2M x 16 8M x 4 / 4M x 8 / 2M x 16 8M x 4 / 4M x 8 / 2M x 16 Refresh Counter Output Buffer Row Decoder Row Buffer DQi Address Register CLK ADD Column Decoder Col. Buffer Latency & Burst Length LRAS LCBR LCKE LRAS LCBR LWE LCAS Timing Register Programming Register LWCBR LDQM CLK CKE CS RAS CAS WE L(U)DQM * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 August 2004 SDRAM 128Mb F-die (x4, x8, x16) PIN CONFIGURATION (Top view) x16 x8 x4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 CMOS SDRAM x4 VSS N.C VSSQ N.C DQ3 VDDQ N.C N.C VSSQ N.C DQ2 VDDQ N.C VSS N.C/RFU DQM CLK CKE N.C A11 A9 A8 A7 A6 A5 A4 VSS x8 VSS DQ7 VSSQ N.C DQ6 VDDQ N.C DQ5 VSSQ N.C DQ4 VDDQ N.C VSS N.C/RFU DQM CLK CKE N.C A11 A9 A8 A7 A6 A5 A4 VSS x16 VSS DQ15 VSSQ DQ14 DQ13 VDDQ DQ12 DQ11 VSSQ DQ10 DQ9 VDDQ DQ8 VSS N.C/RFU UDQM CLK CKE N.C A11 A9 A8 A7 A6 A5 A4 VSS VDD VDD VDD DQ0 DQ0 N.C VDDQ VDDQ VDDQ DQ1 N.C N.C DQ2 DQ1 DQ0 VSSQ VSSQ VSSQ DQ3 N.C N.C DQ4 DQ2 N.C VDDQ VDDQ VDDQ DQ5 N.C N.C DQ6 DQ3 DQ1 VSSQ VSSQ VSSQ DQ7 N.C N.C VDD VDD VDD LDQM N.C N.C WE WE WE CAS CAS CAS RAS RAS RAS CS CS CS BA0 BA0 BA0 BA1 BA1 BA1 A10/AP A10/AP A10/AP A0 A0 A0 A1 A1 A1 A2 A2 A2 A3 A3 A3 VDD VDD VDD 54Pin TSOP (400mil x 875mil) (0.8 mm Pin pitch) PIN FUNCTION DESCRIPTION Pin CLK CS Name System clock Chip select Input Function Active on the positive going edge to sample all inputs. Disables or enables device operation by masking or enabling all inputs except CLK, CKE and DQM Masks system clock to freeze operation from the next clock cycle. CKE should be enabled at least one cycle prior to new command. Disable input buffers for power down in standby. Row/column addresses are multiplexed on the same pins. Row address : RA0 ~ RA11, Column address : (x4 : CA0 ~ CA9,CA11), (x8 : CA0 ~ CA9), (x16 : CA0 ~ CA8) Selects bank to be activated during row address latch time. Selects bank for read/write during column address latch time. Latches row addre.


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