C2120Y

Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CSC2120 TO-92 BCE www.DataSheet4U.com Audio Power Amplifier Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified ) DESCRIPTION SYMBOL VALUE VCBO 35 Collector -Base Voltage VCEO 30 Collector -Emitter Voltage VEBO 5.0 Emitter Base Voltage IC 800 Collector Current Continuous IE 800 Emitter Current PC 600 Collector Power Dissipation Tj, Tstg -55 to +150 Operating And Storage Junction Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION MIN ICBO VCB=35V, IE=0 Collector Cut off Current IEBO VEB=5V, IC=0 Emitter Cut off Current VCEO IC=10mA, IB=0 30 Collector -Emitter Voltage hFE*(1) IC=100mA, VCE=1V 100 DC Current Gain hFE*(2) IC=700mA, VCE=1V 35 Collector Emitter Saturation Voltage VCE(Sat) * IC=500mA, IB=20mA VBE(on) IC=10mA, VCE=1V 0.5 Base Emitter Voltage Dynamic Characteristics Cob VCB=10V, IE=0, Collector Output Capacitance f=1MHz ft VCE=5V,IC=10mA, Transition Frequency *(1)hFE CLASSIFICATION 0 : 100 - 200, *Pulse Test : Pulse Width =300us, Duty Cycle=2% UNIT V V V mA mA mW deg C TYP 13 MAX 100 100 320 0.5 0.8 - UNIT nA nA V V V pF 120 Y : 160 - 320, - MHz Continental Device India Limited Data Sheet Page 1 of 3 TO-92 Plastic Package B TO-92 Transistors on Tape and Ammo Pack Amm o Pack Style M EC H AN IC AL D ATA Ad hesive Tape o n Top Side P h A A1 (p) FEE D ...