SD1224-10

SD1224-10 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . . . 30 MHz 28 VOLTS IMD − 28 dB COMMON EMITTER GOLD METALLIZATION POUT = 30 W MIN. WITH 18 dB GAIN .380 4LFL (M113) epoxy sealed ORDER CODE SD1224-10 DESCRIPTION The SD1224-10 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol VCBO VCEO VEBO IC PDISS TJ TSTG Collector-Base Voltage w Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature w w t a .D S a e h U 4 t e 1. Collector 2. Emitter .c m o BRANDING 1224-10 PIN CONNECTION 3. Base 4. Emitter Parameter Value Unit 65 36 4.0 4.5 80 +200 − 65 to +150 V V V A W °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance October 1992 2.2 w w w .D a t a e h S °C/W 4 t e °C U m o .c 1/3 SD1224-10 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCES BVCEO BVEBO ICBO hFE IC = 200mA IC = 200mA IC = 200mA IE = 10mA VCB = 30V VCE = 5V IE = 0mA VBE = 0V IB = 0mA IC = 0mA IE = 0mA IC = .5A 65 65 35 4.0 — 5 — — — — — — — — — — 1 200 V V V V mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP IMD COB Note: PI N f = 30 MHz f = 30 MHz f = 30 MHz f = 1 MHz = 0.48W VCE = 28 V VCE = 28 V VCE = 28 V VCB = 30 V ICQ = 25 mA IC...