DatasheetsPDF.com

MSA-0470 Dataheets PDF



Part Number MSA-0470
Manufacturers Hewlett-Packard
Logo Hewlett-Packard
Description Cascadable Silicon Bipolar MMIC Amplifier
Datasheet MSA-0470 DatasheetMSA-0470 Datasheet (PDF)

Agilent MSA-0470 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 4.0 GHz Description The MSA-0470 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fa.

  MSA-0470   MSA-0470



Document
Agilent MSA-0470 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 4.0 GHz Description The MSA-0470 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using Agilent’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 70 mil Package • 12.5 dBm Typical P1 dB at 1.0 GHz • 8.5 dB Typical Gain at 1.0 GHz • Unconditionally Stable (k>1) • Hermetic Gold-ceramic Microstrip Package Typical Biasing Configuration R bias VCC > 7 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 5.25 V 2 2 MSA-0470 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 100 mA 650 mW +13 dBm 200°C –65 to 200°C Thermal Resistance[2,4]: θjc = 115°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 8.7 mW/°C for TC > 125°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. Electrical Specifications[1], TA = 25°C Symbol GP ∆GP f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT Parameters and Test Conditions: Id = 50 mA, ZO = 50 Ω Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth Input VSWR Output VSWR 50 Ω Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to 2.5 GHz f = 0.1 to 2.5 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 0.1 GHz f = 0.1 to 2.5 GHz Units dB dB GHz Min. 7.5 Typ. 8.5 ± 0.6 4.0 1.7:1 2.0:1 Max. 9.5 ± 1.0 dB dBm dBm psec V mV/°C 4.75 6.5 12.5 25.5 125 5.25 –8.0 5.75 Note: 1. The recommended operating current range for this device is 30 to 70 mA. Typical performance as a function of current is on the following page. 3 MSA-0470 Typical Scattering Parameters (ZO = 50 Ω, TA = 25°C, Id = 50 mA) Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 .18 .18 .18 .17 .16 .16 .16 .21 .26 .32 .37 .40 .41 .42 179 179 179 –179 –176 –174 –166 –163 –162 –170 –177 175 166 155 8.5 8.5 8.5 8.5 8.4 8.3 8.2 7.8 7.3 6.5 5.7 4.7 3.9 3.1 2.67 2.67 2.67 2.65 2.64 2.61 2.56 2.46 2.33 2.12 1.93 1.73 1.57 1.44 176 172 163 155 147 138 117 97 83 65 38 33 20 7 –16.4 –16.4 –16.4 –16.2 –16.1 –15.9 –15.5 –14.6 –13.8 –13.5 –13.2 –12.6 –12.4 –11.9 .151 .151 .152 .155 .158 .161 .169 .186 .



Similar Datasheet



MSA-0436 << | MSA-0470 | >> MSA-0485


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)