Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data
MSA-0800
Features
• Usable Gain to 6.0␣ GHz • High Gain: 32.5...
Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data
MSA-0800
Features
Usable Gain to 6.0␣ GHz High Gain: 32.5 dB Typical at 0.1␣ GHz 23.5 dB Typical at 1.0␣ GHz Low Noise Figure: 3.0␣ dB Typical at 1.0␣ GHz
Description
The MSA-0800 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is designed for use as a general purpose 50 Ω gain block above 0.5␣ GHz and can be used as a high gain
transistor below this frequency. Typical applications include narrow and broad band IF and RF amplifiers in commercial, industrial and military applications.
The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. The recommended assembly procedure is gold-eutectic die attach at 400°C and either wedge or ball bonding using 0.7 mil gold wire.[1] See APPLICATIONS section, “Chip Use”.
Chip Outline[1]
Note: 1. Refer to the APPLICATIONS section “Silicon MMIC Chip Use” for additional information.
Typical Biasing Configuration
R bias VCC > 10 V
RFC (Optional) C block IN
MSA
C block OUT Vd = 7.8 V
5965-9595E
6-410
MSA-0800 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolut...