SSM60T03J

SSM60T03H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge Simple drive requirement Fast switching Description D G S BV DSS R DS(ON) ID 30V 12mΩ 45A The SSM60T03H is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. The through-hole version, the SSM60T03J in TO-251, is available for low-footprint vertical mounting. These devices are manufactured with an advanced process, providing improved on-resistance and switching performance. The devices have a maximum junction temperature rating of 175°C for improved thermal margin and reliability. G D S TO-252 (H) G D S TO-251 (J) Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TC=25°C ID @ TC=100°C IDM PD @ TC=25°C EAS TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Rating 30 ±20 45 32 120 44 0.352 29 -55 to 175 -55 to 175 Units V V A A A W W/°C mJ °C °C Max. 3.4 110 Units °C/W °C/W 8/16/2004 Rev.2.1 www.SiliconStandard.com 1 of 5 SSM60T03H,J Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol Parameter...