BD130

BD130 S w w w .D a t a h t e e 4U . m o c NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS The BD130 is a silicon epitaxial-base NPN transistor in JEDEC TO3 metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VCEX IC IB PT Collector-Emitter Voltage Collector-Base Voltage Ratings Collector-Emitter Voltage Collector Current Base Current TJ w w w .D t a S a e h t e U 4 .c m o Value 60 100 100 15 7 Unit V V V A A Watts VBE=-1.5 V Power Dissipation @ TC = 45° 100 Junction Temperature -55 to +200 TS Storage Temperature °C COMSET SEMICONDUCTORS w w w .D at h S a t e e 4U . m o c 1/3 BD130 THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value 1.55 Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit VCEO(BR) Collector-Emitter Breakdown Voltage (*) IC=200 mA, IB=0 60 V VCE(SAT) Collector-Emitter Saturation IC=4 A, IB=0.4 A Voltage (*) - 0.5 1.1 V ICEX Collector-Emitter Cutoff Current VCE=100 V VBE=-1.5 V - - 0.5 mA VCE=100 V VBE=-1.5 V TCASE=150°C - - 30 IEBO Emitter-Base Cutoff Current VEB=7 V - - 5.0 mA VBE Base-Emitter Voltage (*) IC=4.0 A, VCE=4.0V - 0.95 1.8 V fT Transition Frequency IC=0.1 A, VCE=4 V 1.1 MHz COMSET SEMICONDUCTORS 2/3 BD130 Symbol Ratin...