STP50NE10

STP50NE10 N-channel 100V - 0.021Ω - 50A TO-220 STripFET™ Power MOSFET General features Type VDSS RDS(on) ID STP50NE10 100V <0.027Ω 50A )■ Exceptional high dv/dt capability t(s■ 100% avalanche tested c■ Low gate charge at 100 oC du■ Application oriented characterization Pro t(s)Description lete ucThis Power MOSFET is the latest development of dSTMicroelectronis unique "Single Feature Size™" so rostrip-based process. The resulting transistor b Pshows extremely high packing density for low on- resistance, rugged avalanche characteristics and - O teless critical alignment steps therefore a ) leremarkable manufacturing reproducibility. ct(s bsoApplications du - O■ Switching application 3 2 1 TO-220 Internal schematic diagram OObbssoolleettee PPrrooduct(s)Order codes Part number STP50NE10 Marking P50NE10 Package TO-220 Packaging Tube August 2006 Rev 8 1/12 www.st.com 12 Contents Contents STP50NE10 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 )4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 OObbssoolleettee PPrroodduucctt((ss)) -- OO...