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STB9NC60

ST Microelectronics

N-Channel Enhancement Mode MOSFET


Description
w w at .D w aS e e h U 4 t m o .c N-CHANNEL 600V - 0.6Ω - 9A - D2PAK/I2PAK PowerMesh™ II MOSFET RDS(on) < 0.75 Ω < 0.75 Ω ID 9.0 A 9.0 A STB9NC60 STB9NC60-1 TYPE VDSS 600 V 600 V STB9NC60 STB9NC60-1 s s s s s TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 1 DESCRI...



ST Microelectronics

STB9NC60

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