RD38F1010xxxx

m o .c ® U Intel Advanced+ Boot Block Flash 4 t e Memory (C3) e hSCSP Family S a t Datasheet a .D Product Features w w w m o .c U 4 t e e h S a t a .D w w w ■ ■ ■ ■ Flash Memory Plus SRAM — Reduces Memory Board Space Required, Simplifying PCB Design Complexity SCSP Technology — Smallest Memory Subsystem Footprint — Area : 8 x 10 mm for 16 Mbit (0.13 µm) Flash + 2 Mbit or 4 Mbit SRAM — Area : 8 x 12 mm for 32 Mbit (0.13 µm) Flash + 4 Mbit or 8 Mbit SRAM — Height : 1.20 mm for 16 Mbit (0.13 µm) Flash + 2 Mbit or 4 Mbit SRAM, and 32 Mbit (0.13um) Flash + 8 Mbit SRAM — Height : 1.40 mm for 32 Mbit (0.13 µm) Flash + 4 Mbit SRAM — This Family also includes 0.25 µm, 0.18 µm, and 0.13 µm technologies Advanced SRAM Technology — 70 ns Access Time — Low Power Operation — Low Voltage Data Retention Mode Intel® Flash Data Integrator (FDI) Software — Real-Time Data Storage and Code Execution in the Same Memory Device — Full Flash File Manager Capability ■ ■ ■ ■ Advanced+ Boot Block Flash Memory —70 ns Access Time —Instant, Individual Block Locking —128 bit Protection Register —12 V Production Programming —Fast Program and Erase Suspend —Extended Temperature –25 °C to +85 °C Blocking Architecture —Block Sizes for Code + Data Storage —4-Kword Parameter Blocks —64-Kbyte Main Blocks —100,000 Erase Cycles per Block Low Power Operation —Asynchronous Read Current: 9 mA (Flash) —Standby Current: 7 µA (Flash) —Automatic Power Saving Mode Flash Technologies —0.25 µm ETOX™ VI, 0.18 µm ETOX™ VI...