Document
m o c . Semicondu ctor U 4 t e e h Features S • High speed switching a t=400V • VCEO(sus) a • Suitable .D for Switching Regulator and Motor Control w w Ordering Information w
Type NO. STD13007 Marking STD13007
STD13007
NPN Silicon Power Transistor
Package Code TO-220AB
Outline Dimensions
w
w
w
t a .D
S a
e h
U 4 t e
.c
m o
unit :
mm
KST-H023-000
w
w
w
.D
a
PIN Connections 1. Base 2. Collector 3. Emitter
S a t
e e h
U 4 t
m o .c
1
STD13007
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Total Power dissipation (Tc=25℃) Junction temperature Storage temperature (Tc=25℃)
Symbol
VCBO VCEO VEBO IC ICP IB PD Tj Tstg
Ratings
700 400 9 8 16 4 80 150 -55~150
Unit
V V V A A A W °C °C
Electrical Characteristics
Characteristic
Collector-Emitter sustaining voltage Emitter cut-off current DC Current gain
(Tc=25℃)
Symbol
BVCEO IEBO hFE*
Test Condition
IC=10mA, IB=0 VEB=9V, IC=0 IC=2A, VCE=5V IC=5A, VCE=5V IC=2A, IB=0.4A IC=5A, IB=1A IC=8A, IB=2A
Min. Typ. Max.
400 8 5 4 80 1 60 30 1 2 3 1.2 1.6 1.6 3 0.7
Unit
V mA
Collector-Emitter saturation voltage
VCE(sat)*
V
Base-Emitter saturation voltage Transition frequency Output capacitance Turn on Time Storage Time Fall Time * Pulse test: PW≤300 ㎲, Duty cycle≤2%.
VBE(sat)* fT Cob ton tstg tf
IC=2A, IB=0.4A IC=5A, IB=1A VCE=10V, IC=0.5A, f=1MHz VCB=10V, IE=0, f=0.1MHz VCC=125V, IC=5A IB1=-IB2=1A
V MHz pF
-
㎲
KST-H023-000
2
STD13007
Electrical Characteristic Curves
Fig. 1 PD - TC Fig. 2 VBE(sat) , VCE(sat) - IC
Fig. 3 hFE-IC
Fig. 4 Turn off time
stg
f
Fig. 5 Turn on time
Fig. 6 Capacitance
KST-H023-000
3
STD13007
Fig. 7 Safe Operating Area
KST-H023-000
4
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