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TetraFET
D2020UK.02
METAL GATE RF SILICON FET
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8 7 6 5
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S a MECHANICAL at DATA .D w w w
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TetraFET
D2020UK.02
METAL GATE RF SILICON FET
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8 7 6 5
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GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED
FEATURES
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SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS
PIN 5 – SOURCE PIN 6 – GATE PIN 7 – GATE PIN 8 – SOURCE
SO8 PACKAGE
PIN 1 – SOURCE PIN 2 – DRAIN PIN 3 – DRAIN PIN 4 – SOURCE
VERY LOW Crss
Dim. A B C D E F G H J K L M N P
mm 4.06 5.08 1.27 0.51 3.56 4.06 1.65 0.76 0.51 1.02 45° 0° 7° 0.20 2.18 4.57
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Tol. ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 +0.25 -0.00 Min. Max. Max. Min. Max. ±0.08 Max. ±0.08
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Inches 0.160 0.200 0.050 0.020 0.140 0.160 0.065 0.030
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Tol. ±0.003 ±0.003 ±0.003 ±0.003 ±0.003 ±0.003 ±0.003 +0.010 -0.000 Min. Max. Max. Min. Max. ±0.003 Max. ±0.003
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SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN – 13 dB MINIMUM
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APPLICATIONS
HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz
0.020 0.040 45° 0° 7° 0.008 0.086 0.180
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage* Drain Current Storage Temperature Maximum Operating Junction Temperature
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail:
[email protected]
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30W 65V ±20V 2A –65 to 150°C 200°C
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