D2020UK-P

PR EL IM INA RY S a MECHANICAL atDATA .D w w w e e h U 4 t FEATURES SIMPLIFIED AMPLIFIER DESIGN VERY LOW Crss m o .c TetraFET D2020UK–P METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED SUITABLE FOR BROAD BAND APPLICATIONS w w w t a .D S a SIMPLE BIAS CIRCUITS LOW NOISE e h U 4 t e .c m o HIGH GAIN – 13 dB MINIMUM APPLICATIONS HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz SOIC PACKAGE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage* Drain Current Storage Temperature Maximum Operating Junction Temperature Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk w w w .D a t a ±20V 2A –65 to 150°C 200°C Prelim. 9/95 4 t e 30W e 65V Sh U m o .c PR EL IM INA RY ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 ID = 10mA 65 D2020UK–P Typ. Max. Unit V 2 1 5 mA VDS = 28V VGS = 0 VDS = 0 IGSS gfs Gate Leakage Current VGS = 20V VDS = 10V PO = 5W mA V S dB % — VGS(th) Gate Threshold Voltage* GPS ID = 10mA VDS = VGS 1 Forward Transconductance* Drain Efficiency ID = 0.4A 0.36 13 40 Common Source Power Gain h VDS = 28V f = 1GHz IDQ = 0.4A VSWR...