Document
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2481
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION The 2SK2481 is N-Channel MOS Field Effect Transistor de-
signed for high voltage switching applications.
FEATURES • Low On-Resistance
RDS(on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A)
• Low Ciss Ciss = 900 pF TYP. • High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS 900 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±4.0
A
Drain Current (pulse)*
ID(pulse) ±12
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
70 W
Total Power Dissipation (TA = 25 ˚C)
PT2
1.5 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS 4.0 A
Single Avalanche Energy**
EAS 65.9 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
PACKAGE DIMENSIONS (in millimeters)
10.6 MAX.
4.8 MAX.
3.6 ± 0.2 10.0
1.3 ± 0.2
3.0 ± 0.3 6.0 MAX. 5.9 MIN. 12.7 MIN. 15.5 MAX.
4 1 23
1.3 ± 0.2
0.5 ± 0.2
0.75 ± 0.1 2.54
2.8 ± 0.2 2.54
1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB
MP-25 (TO-220)
Drain
Gate
Body Diode
Source
Document No. D10273EJ1V0DS00 (1st edition) Date Published August 1995 P Printed in Japan
© 1995
2SK2481
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC Drain to Source On-State Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
SYMBOL RDS(on) VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr
MIN.
2.5 1.0
TYP. 3.2
900 130 25 17
7 63 8 30 5 13 1.0 710 3.5
MAX. 4.0 3.5
100 ±100
UNIT Ω V S µA nA
pF pF pF ns ns ns ns nC nC nC V ns µC
TEST CONDITIONS VGS = 10 V, ID = 2.0 A VDS = 10 V, ID = 1 mA VDS = 20 V, ID = 2.0 A VDS = VDSS, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 2.0 A VGS = 10 V VDD = 150 V RG = 10 Ω ID = 4.0 A VDD = 450 V VGS = 10 V IF = 4.0 A, VGS = 0 IF = 4.0 A, VGS = 0 di/dt = 50 A/µs
Test Circuit 1 Avalanche Capability
D.U.T. RG = 25 Ω
PG VGS = 20 - 0 V
50 Ω
L VDD
ID VDD
IAS
BVDSS VDS
Starting Tch Test Circuit 3 Gate Charge
D.U.T. IG = 2 mA
PG. 50 Ω
RL VDD
Test Circuit 2 Switching Time
D.U.T.
PG.
RG RG = 10 Ω
VGS 0
t
t = 1us Duty Cycle ≤ 1 %
RL VGS
VGS
Wave Form
0 10 %
VDD
ID
VGS (on) 90 %
ID
Wave Form
0 10 % td (on)
ID t tr d (off)
90 %
90 % 10 % tf
t ton off
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
2
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
dT - Percentage of Rated Power - %
100 80 60 40 20
0 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA 100
PW
10 1
0.1
RDS(on) Limited
TC = 25 ˚C Single Pulse
(VGS
=
10 V)
ID(DC)
Power
ID(pulse)
1
Dissiation
10 ms Limited
= ms
100
µ
s
1 10 100 1000
VDS - Drain to Source Voltage - V
ID - Drain Current - A
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
100
TA = –25 ˚C 25 ˚C
10 75 ˚C 125 ˚C
Pulsed VDS = 10 V
1.0
0.1
0 5 10 15 VGS - Gate to Source Voltage - V
ID - Drain Current - A
PT - Total Power Dissipation - W
2SK2481
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 70 60 50 40 30 20 10 0 20 40 60 80 100 120 140 160
TC - Case Temperature - ˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
Pulsed 10
VGS = 20 V 10 V 8V
5 6V
0 10 20 30 40 VDS - Drain to Source Voltage - V
3
| yfs | - Forward Transfer Admittance - S
2SK2481
1 000 100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth(ch-a) = 83.3(˚C/W)
rth(t) - Transient Thermal Resistance - ˚C/W
10 Rth(ch-c) = 1.79(˚C/W)
1
0.1
0.01
0.001 10 µ 100 µ 1 m 10 m 100 m
1
PW - Pulse Width - s
Single Pulse Tc = 25 ˚C
10 100 1 000
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
100 VDS = 20 V Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
Pulsed
10
TA = –25 ˚C 25 ˚C 75 ˚C
125 ˚C
1.0
10
ID = 4 A 5 2A
0.8 A
RDS(on) - Drain to Source On-State Resistance - Ω
0.1 1 0.1 1.0 10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 8
Pulsed 7 VGS = 10 V
6
5 4 3
2
1 0
0.1
1.0 10 ID - Drain Current - A
100
VGS(off) - Gate to Source Cutoff Voltage - V
0 10 20 30 VGS - Gate to Source Voltage - V
GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE
VDS = 10 V ID = 1 mA
5
0 –50 0 50 100 150 Tch - Channel Temperature - ˚C
RDS(on) - Drain to Source On-State Resistance - Ω
4
RDS(on) - Drain to Source On-State Resistance - Ω
Ciss, Coss, Crss - Capacitance - pF
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
5
VGS = 10 V 0 ID = 2 A
–50 0 50 100 150
Tch - Channel Temperature .