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K2481 Dataheets PDF



Part Number K2481
Manufacturers NEC
Logo NEC
Description 2SK2481
Datasheet K2481 DatasheetK2481 Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2481 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2481 is N-Channel MOS Field Effect Transistor de- signed for high voltage switching applications. FEATURES • Low On-Resistance RDS(on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A) • Low Ciss Ciss = 900 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS 900 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID(DC) ±4.0 .

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2481 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2481 is N-Channel MOS Field Effect Transistor de- signed for high voltage switching applications. FEATURES • Low On-Resistance RDS(on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A) • Low Ciss Ciss = 900 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS 900 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID(DC) ±4.0 A Drain Current (pulse)* ID(pulse) ±12 A Total Power Dissipation (Tc = 25 ˚C) PT1 70 W Total Power Dissipation (TA = 25 ˚C) PT2 1.5 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Single Avalanche Current** IAS 4.0 A Single Avalanche Energy** EAS 65.9 mJ * PW ≤ 10 µs, Duty Cycle ≤ 1 % ** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0 PACKAGE DIMENSIONS (in millimeters) 10.6 MAX. 4.8 MAX. 3.6 ± 0.2 10.0 1.3 ± 0.2 3.0 ± 0.3 6.0 MAX. 5.9 MIN. 12.7 MIN. 15.5 MAX. 4 1 23 1.3 ± 0.2 0.5 ± 0.2 0.75 ± 0.1 2.54 2.8 ± 0.2 2.54 1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB MP-25 (TO-220) Drain Gate Body Diode Source Document No. D10273EJ1V0DS00 (1st edition) Date Published August 1995 P Printed in Japan © 1995 2SK2481 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) CHARACTERISTIC Drain to Source On-State Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on) VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr MIN. 2.5 1.0 TYP. 3.2 900 130 25 17 7 63 8 30 5 13 1.0 710 3.5 MAX. 4.0 3.5 100 ±100 UNIT Ω V S µA nA pF pF pF ns ns ns ns nC nC nC V ns µC TEST CONDITIONS VGS = 10 V, ID = 2.0 A VDS = 10 V, ID = 1 mA VDS = 20 V, ID = 2.0 A VDS = VDSS, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 2.0 A VGS = 10 V VDD = 150 V RG = 10 Ω ID = 4.0 A VDD = 450 V VGS = 10 V IF = 4.0 A, VGS = 0 IF = 4.0 A, VGS = 0 di/dt = 50 A/µs Test Circuit 1 Avalanche Capability D.U.T. RG = 25 Ω PG VGS = 20 - 0 V 50 Ω L VDD ID VDD IAS BVDSS VDS Starting Tch Test Circuit 3 Gate Charge D.U.T. IG = 2 mA PG. 50 Ω RL VDD Test Circuit 2 Switching Time D.U.T. PG. RG RG = 10 Ω VGS 0 t t = 1us Duty Cycle ≤ 1 % RL VGS VGS Wave Form 0 10 % VDD ID VGS (on) 90 % ID Wave Form 0 10 % td (on) ID t tr d (off) 90 % 90 % 10 % tf t ton off The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 TYPICAL CHARACTERISTICS (TA = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - % 100 80 60 40 20 0 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 100 PW 10 1 0.1 RDS(on) Limited TC = 25 ˚C Single Pulse (VGS = 10 V) ID(DC) Power ID(pulse) 1 Dissiation 10 ms Limited = ms 100 µ s 1 10 100 1000 VDS - Drain to Source Voltage - V ID - Drain Current - A ID - Drain Current - A FORWARD TRANSFER CHARACTERISTICS 100 TA = –25 ˚C 25 ˚C 10 75 ˚C 125 ˚C Pulsed VDS = 10 V 1.0 0.1 0 5 10 15 VGS - Gate to Source Voltage - V ID - Drain Current - A PT - Total Power Dissipation - W 2SK2481 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 70 60 50 40 30 20 10 0 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed 10 VGS = 20 V 10 V 8V 5 6V 0 10 20 30 40 VDS - Drain to Source Voltage - V 3 | yfs | - Forward Transfer Admittance - S 2SK2481 1 000 100 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth(ch-a) = 83.3(˚C/W) rth(t) - Transient Thermal Resistance - ˚C/W 10 Rth(ch-c) = 1.79(˚C/W) 1 0.1 0.01 0.001 10 µ 100 µ 1 m 10 m 100 m 1 PW - Pulse Width - s Single Pulse Tc = 25 ˚C 10 100 1 000 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 VDS = 20 V Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 10 TA = –25 ˚C 25 ˚C 75 ˚C 125 ˚C 1.0 10 ID = 4 A 5 2A 0.8 A RDS(on) - Drain to Source On-State Resistance - Ω 0.1 1 0.1 1.0 10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 8 Pulsed 7 VGS = 10 V 6 5 4 3 2 1 0 0.1 1.0 10 ID - Drain Current - A 100 VGS(off) - Gate to Source Cutoff Voltage - V 0 10 20 30 VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 10 V ID = 1 mA 5 0 –50 0 50 100 150 Tch - Channel Temperature - ˚C RDS(on) - Drain to Source On-State Resistance - Ω 4 RDS(on) - Drain to Source On-State Resistance - Ω Ciss, Coss, Crss - Capacitance - pF DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 5 VGS = 10 V 0 ID = 2 A –50 0 50 100 150 Tch - Channel Temperature .


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