P-Channel Enhancement Mode MOSFET
S amHop Microelectronics C orp.
h P -C hannel E S nhancement Mode MOS FE T a t a P R ODUC T S UMMAR Y D . R V w w I w
D...
Description
S amHop Microelectronics C orp.
h P -C hannel E S nhancement Mode MOS FE T a t a P R ODUC T S UMMAR Y D . R V w w I w
DS S D
t e e
4U
m o .c
S T U/D1030P L
P reliminary May.28 2004
F E AT UR E S
DS (ON) ( m W ) Max
S uper high dense cell design for low R DS (ON ).
-30V
-18A
55 @ V G S = -10V 85 @ V G S = -4.5V
R ugged and reliable.
TO-252 and TO-251 P ackage.
D G S
G D
S
S DU S E R IE S TO-252AA(D-P AK)
S DD S E R IE S TO-251(l-P AK)
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage
Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange
w
w
w
.D
t a
S a
e h
V DS V GS ID IDM IS PD
t e
G
U 4
D S
.c
m o
S ymbol
Limit 30 20 18 45 20 50 -55 to 175
Unit V V A A A
T J , T S TG
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient
1
R JC R JA
w
w
w
.D
at 3
h S a
t e e
W U 4
.
m o c
C
C /W C /W
50
S T U/D1030P L
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter
5
S ymbol
BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS
c
Condition
V GS = 0V, ID = -250uA V DS = -24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS = -10V, ID =-5.3A V GS = -4.5V, ID = -4.2A V DS = -5V, V GS = -10V V DS = -15V, ID = - 5.3A
Min Typ C Max Unit
-30 -1 100 -1 -1.8 -2.5 45 70...
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