STU14NA50

m o .c U 4 t e STU14NA50 e h S N - CHANNEL ENHANCEMENT MODE a t FAST POWER MOS TRANSISTOR a .D w w w TYPICAL R = 0.31 Ω PRELIMINARY DATA TYPE V DSS R DS(on) ID STU14NA50 500 V < 0.36 Ω 14 A s s s s s s s s EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW INTRINSIC CAPACITANCE 100% AVALANCHE TESTED GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD DESCRIPTION The Max220 TM package is a new high volume power package exibiting the same footprint as the industry standard TO-220, but designed to accomodate much larger silicon chips, normally supplied in bigger packages. The increased die capacity makes the device ideal to reduce component count in multiple paralleled TO-220 designs and save board space with respect to larger packages. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES (UPS) ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( ) P tot T stg Tj Drain-source Voltage (V GS = 0) Gate-source Voltage Drain- gate Voltage (R GS = 20 k Ω ) Drain Current (continuous) at T c = 25 o C o m o .c U 4 t e e h S a t a .D w w w DS(on) 1 2 3 Max220TM INTERNAL SCHEMATIC DIAGRAM Parameter Value 500 Unit V V V 500 Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o ...