N-Channel Enhancement Mode Fast Power MOS Transistor
Description
m o .c U 4 t e STU10NA50 e h S N - CHANNEL ENHANCEMENT MODE a t FAST POWER MOS TRANSISTOR a .D w w w
PRELIMINARY DATA TYPE V DSS R DS(on) ID STU10NA50 500 V < 0.6 Ω 10.2 A
s s s s s s s
TYPICAL RDS(on) = 0.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW INTRINSIC CAPACITANCE 100% AVALANCHE TESTED GATE CHARGE MINIMIZED REDUCED THRESHO...
