MX29LV004B

FEATURES w w Extended single - supply voltage range 2.7V to 3.6V 524,288 x 8 Single power supply operation - 3.0V only operation for read, erase and program operation Fast access time: 55R/70/90ns Low power consumption - 20mA maximum active current - 0.2uA typical standby current Command register architecture - Byte Programming (9us typical) - Sector Erase (Sector structure 16K-Byte x 1, 8K-Byte x 2, 32K-Byte x1, and 64K-Byte x7) Auto Erase (chip & sector) and Auto Program - Automatically erase any combination of sectors with Erase Suspend capability. - Automatically program and verify data at specified address Erase suspend/Erase Resume - Suspends sector erase operation to read data from, or program data to, any sector that is not being erased, then resumes the erase. w .D at h S a t e e 4U . m o c MX29LV004T/B 4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY GENERAL DESCRIPTION The MX29LV004T/B is a 4-mega bit Flash memory organized as 512K bytes of 8 bits. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29LV004T/ B is packaged in 40-pin TSOP and 32-pin PLCC. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. The standard MX29LV004T/B offers access time as fast as 55ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX29LV004T/B has separate chip enable (CE#) and output enab...