LE25FV101T

CMOS LSI m LE25FV101T o .c 4U 1M (128k words × 8bits) Serial Flash EEPROM t e e h S Featuresa t EEPROM Technology CMOS Flash High Read/Write Reliability a Single 3.3-Volt Read and Write Operations Sector-write Endurance Cycles: 10 D . Sector Erase Capability: 256 Bytes per sector 10 Years Data Retention w Frequency: 10MHz Operating Self-timed Erase and Programming w Power Consumption Byte Programming: 35 µs (Max.) w Low Active Current (Read): 25 mA (Max.) End of Write Detection: Status Register Read 4 Preliminary Specifications Standby Current: 20 µA (Max.) Serial Peripheral Interface (S.P.I.) mode 0. Product Description The LE25FV101T is a 128K x 8 CMOS sector erase, byte programmable serial Flash EEPROM. The LE25FV101T is manufactured using SANYO's proprietary, high performance CMOS Flash EEPROM technology. Breakthroughs in EEPROM cell design and process architecture attain better reliability and manufacturability compared with conventional approaches. The LE25FV101T erases and programs with a 3.3-volt only power supply. LE25FV101T conforms to Serial Peripheral Interface (S.P.I.). Featuring high performance programming, the LE25FV101T typically byte programs in 35 µs. The LE25FV101T typically sector (256 bytes) erases in 4ms. Both program and erase times can be optimized using interface feature such as Status Register to indicate the completion of the write cycle. To protect against an inadvertent write, the LE25FV101T has on chip hardware data protection scheme. Desig...