MRF9030MR1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF9030M/D The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. Typical Performance at 945 MHz, 26 Volts Output Power — 30 Watts PEP Power Gain — 20 dB Efficiency — 41% (Two Tones) IMD — -31 dBc Integrated ESD Protection Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts (CW) Output Power Excellent Thermal Stability Characterized with Series Equivalent Large-Signal Impedance Parameters Dual-Lead Boltdown Plastic Package Can Also Be Used As Surface Mount. TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Characteristic Thermal Resistance, Junction to Case Symbol RθJC MRF9030MR1 MRF9030MBR1 945 MHz, 30 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs Freescale Semiconductor, Inc... CASE 1265-08, STYLE 1 TO-270-2 PLASTIC MRF9030MR1 CASE 1337-03, STYLE 1 ...