C30831

N-Type Silicon PIN Photodetectors C30807, C30808, C30809, C30810, C30822, C30831 EVERYTHING IN A NEW LIGHT. Description This family of N-type silicon p-i-n photodiodes is designed for use in a wide variety of broad band low light level applications covering the spectral range from below 400 to over 1100 nm. The different types making up this series provide a broad choice in photosensitive areas and in time response characteristics. Each of the types is antireflection coated to enhance responsivity at 900 nm. These characteristics make the devices highly useful in HeNe and GaAs laser detection systems and in optical demodulation, data transmission, ranging, and high-speed switching applications. Features Broad Range of Photosensitive Surface Areas 0.2 mm2 to 100 mm2 Low Operating Voltage VR = 45V Anti-Reflection Coated to Enhance Responsivity at 900 nm Hermetically-Sealed Packages Spectral Response Range 400 to 1100 nm Maximum Ratings, Absolute-Maximum Values (All Types) DC Reverse Operating Voltage VR . . . . . . . . . . . . . . . .100 max. V Photocurrent Density, jp at 22°C: Average value, continuous operation . . . . . . . . . .5 mA/mm2 Peak value . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 mA/mm2 Forward Current, IF: Average value, continuous operation . . . . . . . . . .10 max. mA Peak value . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 max. mA Ambient Temperature: Storage, Tstg . . . . . . . . . . . . . . . . . . . . . . ....