MOTOROLA
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m o Advance Data Sheet.c U TMOS E-FET t4 . ™ eEffect Transistor Power Field e N–Channel h Enhancement–Mode Silicon Gate S a t a D . w w
This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for l...
