FDM6296

FDM6296 Single N-Channel, Logic-Level, PowerTrench® MOSFET December 2004 FDM6296 Single N-Channel, Logic-Level, PowerTrench® MOSFET Features ■ 11.5 A, 30 V RDS(ON) = 10.5 mΩ @ VGS = 10 V RDS(ON) = 15 mΩ @ VGS = 4.5 V ■ Low Qg, Qgd and Rg for efficient switching performance ■ Low Profile – MicroFET 3.3 x 3.3 mm General Description This single N-Channel MOSFET in the thermally efficient MicroFET package has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between Rds(on) and gate charge this device can be effectively used as a “high side” control switch or “low side” synchronous rectifier. Applications ■ Point of Load Converter ■ 1/16 Brick Synchronous Rectifier MicroFET Bottom 6 5 7 8 Top 5 6 7 2 1 4 3 2 1 8 4 3 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation (Steady State) (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range (Note 1a) Parameter Ratings 30 ±20 11.5 40 2.5 1.2 –55 to +150 Units V V A W °C Thermal Characteristics RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1b) (Note 1) 52 108 5 °C/W Package Marking and Ordering Information Device Marking 6296 Device FDM6296 Reel Size 7’’ Tape width 12mm Quantity 3000 units ©2004 Fairchild Semiconductor Corpor...