MRF160

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF160/D The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50% Excellent Thermal Stability, Ideally Suited for Class A Operation Facilitates Manual Gain Control, ALC and Modulation Techniques 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR Low Crss – 0.8 pF Typical at VDS = 28 Volts Designed primarily for wideband large–signal output and driver from 30–500 MHz. MRF160 4.0 W, to 400 MHz MOSFET BROADBAND RF POWER FET CASE 249–06, STYLE 3 D G S MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain–Gate Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage Drain Current–Continuous Total Device Dissipation @ TC = 25°C Derate Above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 65 65 ± 40 1.0 24 0.14 – 65 to +150 200 Unit Vdc Vdc Vdc ADC Watts W/°C °C °C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case RθJC 7.2 °C/W NOTE: Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 2 RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1995 MRF160 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–S...