MRF16006

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF16006/D NPN Silicon MRF16006 6.0 WATTS, 1.6 GHz RF POWER TRANSISTOR NPN SILICON RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. Specified 28 Volt, 1.6 GHz Class–C Characteristics Output Power = 6 Watts Minimum Gain = 7.4 dB, @ 6 Watts Minimum Efficiency = 40% @ 6 Watts Characterized with Series Equivalent Large–Signal Parameters from 1500 MHz to 1700 MHz Silicon Nitride Passivated Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 395C–01, STYLE 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Collector–Emitter Voltage Emitter–Base Voltage Collector–Current Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Symbol VCES VEBO IC PD Tstg Value 60 4.0 1.0 26 0.15 – 65 to +150 Unit Vdc Vdc Adc Watts W/°C °C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case (1) (2) RθJC 6.8 °C/W (1) Thermal measurement performed using CW RF operating condition. (2) Thermal resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 2 RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1995 MRF16006 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ ...