MRF166

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF166/D The RF MOSFET Line RF Power Field Effect Transistors Low Crss — 4.5 pF @ VDS = 28 V N–Channel Enhancement Mode MOSFETs Designed primarily for wideband large–signal output and driver from 30 – 500 MHz. MRF166C — Typical Performance at 400 MHz, 28 Vdc Output Power = 20 W Gain = 17 dB Efficiency = 55% Optional 4–Lead Flange Package (MRF166) Replacement for Industry Standards such as MRF136, DV2820, BLF244, SD1902, and ST1001 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR Facilitates Manual Gain Control, ALC and Modulation Techniques Excellent Thermal Stability, Ideally Suited for Class A Operation Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. D MRF166 MRF166C 20 W, 500 MHz MOSFET BROADBAND RF POWER FETs CASE 211–07, STYLE 2 G S CASE 319–07, STYLE 3 MAXIMUM RATINGS Rating Drain–Gate Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate Above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 65 65 ± 40 4.0 70 0.4 – 65 to 150 200 Unit Vdc Vdc Adc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 2.5 Unit °C/W NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling...