MRF166W

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF166W/D The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Push–Pull Configuration Reduces Even Numbered Harmonics Typical Performance at 400 MHz, 28 Vdc Output Power = 40 Watts Gain = 13 dB Efficiency = 50% Typical Performance at 175 MHz, 28 Vdc Output Power = 40 Watts Gain = 17 dB Efficiency = 60% Excellent Thermal Stability, Ideally Suited for Class A Operation Facilitates Manual Gain Control, ALC and Modulation Techniques 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR Low Crss — 4.5 pF @ VDS = 28 Volts Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. Designed primarily for wideband large–signal output and driver stages to 500 MHz. MRF166W 40 W, 500 MHz TMOS BROADBAND RF POWER FET CASE 412–01, Style 1 1 3 5 4 FLANGE 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain–Gate Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 65 65 ± 40 8.0 175 1.0 – 65 to +150 200 Unit Vdc Vdc Adc ADC Watts °C/W °C °C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case RθJC 1.0 °C/W NOTE: Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precauti...