N - CHANNEL 600V - 0.6ohm - 9A TO-220/TO-220FP PowerMESHII MOSFET
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STP9NC60 STP9NC60FP
N - CHANNEL 600V - 0.6Ω - 9A TO-220/TO-220FP PowerMESH™ ΙΙ MOSFET
T YPE STP9NC60 STP9NC60FP
ν ν ...
Description
®
STP9NC60 STP9NC60FP
N - CHANNEL 600V - 0.6Ω - 9A TO-220/TO-220FP PowerMESH™ ΙΙ MOSFET
T YPE STP9NC60 STP9NC60FP
ν ν ν ν ν
V DSS 600 V 600 V
R DS(on) < 0.75 Ω < 0.75 Ω
ID 9.0 A 5.2 A
TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
1 2
3
1 2
3
DESCRIPTION The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. APPLICATIONS ν HIGH CURRENT, HIGH SPEED SWITCHING ν SWITH MODE POWER SUPPLIES (SMPS) ν DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol V DS V DGR V GS ID ID I DM ( ) P tot dv/dt( 1 ) V ISO T s tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 kΩ ) G ate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. O perating Junction Temperature
o
Value ST P9NC60 STP9NC60F P 600 600 ± 30 9.0 5.7 36 125 1.0 4.5 -65 to 150 150
(1) ISD ≤ 9A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit V V V A A A W W/ C V/ns V
o o o
5.2 3...
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