STP9NC60

® STP9NC60 STP9NC60FP N - CHANNEL 600V - 0.6Ω - 9A TO-220/TO-220FP PowerMESH™ ΙΙ MOSFET T YPE STP9NC60 STP9NC60FP ν ν ν ν ν V DSS 600 V 600 V R DS(on) < 0.75 Ω < 0.75 Ω ID 9.0 A 5.2 A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 1 2 3 1 2 3 DESCRIPTION The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. APPLICATIONS ν HIGH CURRENT, HIGH SPEED SWITCHING ν SWITH MODE POWER SUPPLIES (SMPS) ν DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR V GS ID ID I DM ( ) P tot dv/dt( 1 ) V ISO T s tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 kΩ ) G ate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. O perating Junction Temperature o Value ST P9NC60 STP9NC60F P 600 600 ± 30 9.0 5.7 36 125 1.0 4.5  -65 to 150 150 (1) ISD ≤ 9A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Unit V V V A A A W W/ C V/ns V o o o 5.2 3...