K3467

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3467 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3467 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3467 2SK3467-ZK PACKAGE TO-220AB TO-263(MP-25ZK) FEATURES 4.5 V drive available Low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 40 A) Low gate charge QG = 55 nC TYP. (ID = 80 A, VDD = 16 V, VGS = 10 V) Built-in gate protection diode Surface mount device available (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (Pulse) Note VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 20 ±20 ±80 ±320 1.5 76 150 −55 to +150 V V A A W W °C °C (TO-263) Total Power Dissipation (TA = 25°C) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Note PW ≤ 10 µs, Duty Cycle ≤ 1% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14991EJ1V0DS00 (1st edition) Date Published March 2001 NS CP(K) Printed in Jap...