50N024

www.DataSheet4U.com SUD50N024-06P New Product Vishay Siliconix N-Channel 22-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 24C FEATURES ID (A)d 80 64 rDS(on) (W) 0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency APPLICATIONS D Synchronous Buck DC/DC Conversion - Desktop - Server D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD50N024-06P S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Pulse Voltage Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current, Single Pulse Avalanche Energy, Single Pulse TA = 25_C Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C PD TJ, Tstg L = 0.1 mH TC = 25_C TC= 100_C ID IDM IS IAS EAS Symbol VDS(pulse) VDS VGS Limit 24C 22 "20 80d 56d 100 26 45 101 6.8a 65 - 55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case t v 10 sec Steady State RthJA RthJC Symbol Typical 18 40 1.9 Maximum 22 50 2.3 Unit _C/W Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Limited by package c. Pulse condition: TA = 105_C, 50 ns, 300 kHz operation d. Calculation based on maximum allowable Junction Temperature. Package limitation current is 50 A. Document Number: 72289 S-31398—Rev. A,...