SUD50N024
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SUD50N024-06P
New Product
Vishay Siliconix
N-Channel 22-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS ...
Description
www.DataSheet4U.com
SUD50N024-06P
New Product
Vishay Siliconix
N-Channel 22-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
24C
FEATURES
ID (A)d
80 64
rDS(on) (W)
0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency
APPLICATIONS
D Synchronous Buck DC/DC Conversion - Desktop - Server
D
TO-252
G Drain Connected to Tab G D S
Top View Order Number: SUD50N024-06P S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Pulse Voltage Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current, Single Pulse Avalanche Energy, Single Pulse TA = 25_C Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25_C PD TJ, Tstg L = 0.1 mH TC = 25_C TC= 100_C ID IDM IS IAS EAS
Symbol
VDS(pulse) VDS VGS
Limit
24C 22 "20 80d 56d 100 26 45 101 6.8a 65 - 55 to 175
Unit
V
A
mJ W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction Junction-to-Ambient to Ambienta Maximum Junction-to-Case t v 10 sec Steady State RthJA RthJC
Symbol
Typical
18 40 1.9
Maximum
22 50 2.3
Unit
_C/W
Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Limited by package c. Pulse condition: TA = 105_C, 50 ns, 300 kHz operation d. Calculation based on maximum allowable Junction Temperature. Package limitation current is 50 A. Document Number: 72289 S-31398—Rev. A,...
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