DIODE
DIODE Type : 11ES2
FEATURES
* Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capab...
Description
DIODE Type : 11ES2
FEATURES
* Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package
Available
OUTLINE DRAWING
Maximum Ratings
Approx Net Weight:0.17g
Rating
Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range Storage Temperature Range
Symbol VRRM VRSM
IO
IF(RMS)
IFSM
Tjw Tstg
0.98 1.0
45
11ES2
200 400 Ta=25°C *1 50Hz Half Sine Ta=50°C *2 Wave Resistive Load 1.57 50Hz Half Sine Wave,1cycle, Non-repetitive - 40 to + 150 - 40 to + 150
Unit V V
A
A
A
°C °C
Electrical Thermal Characteristics
Characteristics
Symbol
Conditions
Min. Typ. Max.
Unit
Peak Reverse Current
IRM Tj= 25°C, VRM= VRRM
- - 50
µA
Peak Forward Voltage
VFM Tj= 25°C, IFM= 1.0A
- - 1.0
V
Thermal Resistance
Rth(j-a) Junction to Ambient
*1 *2
- - 140 110
°C/W
*1:Without Fin or P.C. Board
*2:P.C. Board Mounted (L=3mm,Print Land=5x5mm,Both Sides)
11ES2 OUTLINE DRAWING (Dmensions in mm)
...
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