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DUAL P-CHANNEL 20V - 0.07 Ω - 4A SO-8 STripFET™ POWER MOSFET
TYPE STS4DPF20L
s s
STS4DPF20L
VDSS 20 V
RDS(on) <0.08 Ω
ID 4A
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TYPICAL RDS(on) = 0.07 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN CELLULAR PHONES
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID IDM(•) Ptot Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Single Operation Drain Current (continuos) at TC = 100°C Single Operation Drain Current (pulsed) Total Dissipation at TC = 25°C Dual Operation Total Dissipation at TC = 25°C Single Operation Value 20 20 ± 16 4 2.5 16 1.6 2 Unit V V V A A A W W
(•) Pulse width limited by safe operating area. February 2002
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Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
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THERMAL DATA
Rthj-amb Tj Tstg (*)Thermal Resistance Junction-ambient Thermal Operating Junction-ambient Storage Temperature Single Operation Dual Operating 62.5 78 -55 to150 -55 to 150 °C/W °C/W °C °C
(*) When Mounted on 0.5 in2 pad of 2 oz.copper
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125°C VGS = ± 16 V Min. 20 1 10 ±100 Typ. Max. Unit V µA µA nA
ON (*)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V VGS = 4.5 V ID = 250 µA ID = 2 A ID = 2 A Min. 1 Typ. 1.6 0.070 0.085 Max. 2.5 0.08 0.10 Unit V Ω Ω
DYNAMIC
Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS= 15V ID = 2 A Min. Typ. 10 1350 490 130 Max. Unit S pF pF pF
VDS = 25V, f = 1 MHz, VGS = 0
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ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 2 A VDD = 15 V RG = 4.7 Ω VGS = 4.5 V (Resistive Load, Figure 1) VDD= 24V ID= 4A VGS=5V (See test circuit, Figure 2) Min. Typ. 25 35 12.5 5 3 16 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID = 2 A VDD = 15 V RG = 4.7Ω, VGS = 4.5 V (Resistive Load, Figure 1) Min. Typ. 125 35 Max. Unit ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (•) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 4 A VGS = 0 45 36 1.6 Test Conditions Min. Typ. Max. 4 16 1.2 Unit A A V ns nC A
di/dt = 100A/µs ISD = 4 A VDD = 15 V Tj = 150°C (See test circuit, Figure 3)
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (•)Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
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Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
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Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
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Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 2: Gate Charge test Circuit
Fig. 3: Test Circuit For Diode Recovery Behaviour
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SO-8 MECHANICAL DATA
DIM. MIN. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019
0016023
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