N-CHANNEL POWER MOSFET
N-CHANNEL 100V - 0.065 Ω - 4A SO-8 STripFET™ II POWER MOSFET
TYPE STS4NF100
s s s s
STS4NF100
VDSS 100 V
RDS(on) <0.0...
Description
N-CHANNEL 100V - 0.065 Ω - 4A SO-8 STripFET™ II POWER MOSFET
TYPE STS4NF100
s s s s
STS4NF100
VDSS 100 V
RDS(on) <0.070 Ω
ID 4A
TYPICAL RDS(on) = 0.065 Ω EXCEPTIONAL dv/dt CAPABILITY 100 % AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION
DESCRIPTION
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.
SO-8
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID IDM() Ptot Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Value 100 100 ± 20 4 2.5 16 2.5 Unit V V V A A A W
() Pulse width limited by safe operating area. July 2001
.
1/8
STS4NF100
THERMAL DATA
Rthj-amb Tj Tstg (*)Thermal Resistance Junction-ambient Thermal Operating Junction-ambient Storage Temperature Single Operatio 50 -55 to 150 -55 to 150 °C/W °C °C
(*) Mounted on FR-4 board (t [ 10 sec.)
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-...
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