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C30921E

PerkinElmer Optoelectronics

(C309xxx) Silicon Avalanche Photodiodes

Description PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diff...


PerkinElmer Optoelectronics

C30921E

File DownloadDownload C30921E Datasheet


Description
Description PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused "reachthrough" structure. This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths. Because the fall time characteristics have no "tail”, the responsivity of the device is independent of modulation frequency up to about 800 MHz. The detector chip is hermetically-sealed behind a flat glass window in a modified TO18 package. The useful diameter of the photosensitive surface is 0.5 mm. PerkinElmer Type C30921E utilizes the same silicon detector chip as the C30902E, but in a package containing a lightpipe which allows efficient coupling of light to the detector from either a focussed spot or an optical fiber up to 0.25 mm in diameter. The internal end of the lightpipe is close enough to the detector surface to allow all of the illumination exiting the lightpipe to fall within the active-area of the detector. The hermetically-sealed TO-18 package allows fibers to be epoxied to the end of the lightpipe to minimize signal losses without fear of endangering detector stability. The C30902E and C309021E are designed for a wide variety of uses including optical communications at data rates to 1 GBit/second, laser range-finding, and any other applications requiring high speed and/or high responsivity. Silicon Avalanche Photodiodes C30902E, C30902S, C30921E, C30921S High Speed Solid State Det...




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