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MR18R1622DF0 Dataheets PDF



Part Number MR18R1622DF0
Manufacturers Samsung semiconductor
Logo Samsung semiconductor
Description (MR1xR1622(4/8/G)DF0) Key Timing Parameters
Datasheet MR18R1622DF0 DatasheetMR18R1622DF0 Datasheet (PDF)

MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIMM Module Datasheet Page 0 Version 1.0 July 2002 MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 (16Mx16)*2(4/8/16)pcs RIMM Module based on 256Mb D-die, 32s banks,16K/32ms Ref, 2.5V (16Mx18)*2(4/8/16)pcs RIMM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V Overview The RIMM module is a general purpose high- performance memory module suitab.

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MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIMM Module Datasheet Page 0 Version 1.0 July 2002 MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 (16Mx16)*2(4/8/16)pcs RIMM Module based on 256Mb D-die, 32s banks,16K/32ms Ref, 2.5V (16Mx18)*2(4/8/16)pcs RIMM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V Overview The RIMM module is a general purpose high- performance memory module suitable for use in a broad range of applications including computer memory, personal computers, workstations and other applications where high bandwidth and low latency are required. The RIMM module consists of 256/288Mb devices. These are extremely high-speed CMOS DRAMs organized as 16M words by 16 or 18 bits. The use of Rambus Signaling Level (RSL) technology permits up to 1066 MHz transfer rates while using conventional system and board design technologies. RDRAM devices are capable of sustained data transfers at 0.94 ns per two bytes (7.5ns per 16 bytes). The RDRAM architecture enables the highest sustained bandwidth for multiple, simultaneous, randomly addressed, memory transactions. The separate control and data buses with independent row and column control yield over 95% bus efficiency. The RDRAM device's 32-bank architecture supports up to four simultaneous transactions per device. RDRAM Key Timing Parameters/Part Numbers The following table lists the frequency and latency bins available for RIMM modules. Table 1: Part Number by Freq. & Latency Speed Organization Bin tRAC I/O (Row Freq. Access (MHz) Time) ns 1066 1066 1066 800 800 1066 1066 1066 800 800 1066 1066 1066 800 800 1066 1066 1066 800 800 32P 32 35 40 45 32P 32 35 40 45 32P 32 35 40 45 32P 32 35 40 45 Part Number -CT9 -CN9 32M x 16/18 -CM9 -CM8 -CK8 -CT9 -CN9 64M x 16/18 -CM9 -CM8 -CK8 -CT9 -CN9 128M x 16/18 -CM9 -CM8 -CK8 -CT9 -CN9 256M x 16/18 -CM9 -CM8 -CK8 MR16/18R1622DF0-CT9 MR16/18R1622DF0-CN9 MR16/18R1622DF0-CM9 MR16/18R1622DF0-CM8 MR16/18R1622DF0-CK8 MR16/18R1624DF0-CT9 MR16/18R1624DF0-CN9 MR16/18R1624DF0-CM9 MR16/18R1624DF0-CM8 MR16/18R1624DF0-CK8 MR16/18R1628DF0-CT9 MR16/18R1628DF0-CN9 MR16/18R1628DF0-CM9 MR16/18R1628DF0-CM8 MR16/18R1628DF0-CK8 MR16/18R162GDF0-CT9 MR16/18R162GDF0-CN9 MR16/18R162GDF0-CM9 MR16/18R162GDF0-CM8 MR16/18R162GDF0-CK8 Features ♦ High speed up to 1066 MHz RDRAM storage ♦ 184 edge connector pads with 1mm pad spacing ♦ Module PCB size : 133.35mm x 31.75mm x 1.27mm (5.25” x 1.25” x 0.05”) - 256Mb and 288Mb base PC800 RIMM Module ♦ Module PCB size : 133.35mm x 34.93mm x 1.27mm (5.25” x 1.375” x 0.05”) - 256Mb and 288Mb base PC1066 RIMM Module ♦ Each RDRAM device has 32 banks, for a total of 512, 256, 128, 64 banks on each 512/576MB, 256/288MB, 128/144MB, 64/72MB module respectively ♦ Gold plated edge connector pad contacts ♦ Serial Presence Detect(SPD) support ♦ Operates from a 2.5 volt supply (±5%) ♦ Powerdown self refresh modes ♦ Separate Row and Column buses for higher efficiency ♦ WBGA package (92 balls) Form Factor The RIMM modules are offered in 184-pad 1mm edge connector pad pitch suitable for 184 contact RIMM connectors. Figure 1 below, shows a sixteen device RIMM module. Note: On double sided modules, RDRAM devices are also installed on bottom side of PCB. Figure 1: RIMM Module shown with heat spreader removed Page 1 Version 1.0 July 2002 MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 Table 2: Module Pad Numbers and Signal Names Pin A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 A20 A21 A22 A23 A24 A25 A26 A27 A28 A29 A30 A31 A32 A33 A34 A35 A36 A37 A38 A39 A40 A41 A42 A43 A44 A45 A46 Pin Name Gnd LDQA8 Gnd LDQA6 Gnd LDQA4 Gnd LDQA2 Gnd LDQA0 Gnd LCTMN Gnd LCTM Gnd NC Gnd LROW1 Gnd LCOL4 Gnd LCOL2 Gnd LCOL0 Gnd LDQB1 Gnd LDQB3 Gnd LDQB5 Gnd LDQB7 Gnd LSCK Vcmos SOUT Vcmos NC Gnd NC Vdd Vdd NC NC NC NC Pin B1 B2 B3 B4 B5 B6 B7 B8 B9 B10 B11 B12 B13 B14 B15 B16 B17 B18 B19 B20 B21 B22 B23 B24 B25 B26 B27 B28 B29 B30 B31 B32 B33 B34 B35 B36 B37 B38 B39 B40 B41 B42 B43 B44 B45 B46 Pin Name Gnd LDQA7 Gnd LDQA5 Gnd LDQA3 Gnd LDQA1 Gnd LCFM Gnd LCFMN Gnd NC Gnd LROW2 Gnd LROW0 Gnd LCOL3 Gnd LCOL1 Gnd LDQB0 Gnd LDQB2 Gnd LDQB4 Gnd LDQB6 Gnd LDQB8 Gnd LCMD Vcmos SIN Vcmos NC Gnd NC Vdd Vdd NC NC NC NC Pin A47 A48 A49 A50 A51 A52 A53 A54 A55 A56 A57 A58 A59 A60 A61 A62 A63 A64 A65 A66 A67 A68 A69 A70 A71 A72 A73 A74 A75 A76 A77 A78 A79 A80 A81 A82 A83 A84 A85 A86 A87 A88 A89 A90 A91 A92 Pin Name NC NC NC NC Vref Gnd SCL Vdd SDA SVdd SWP Vdd RSCK Gnd RDQB7 Gnd RDQB5 Gnd RDQB3 Gnd RDQB1 Gnd RCOL0 Gnd RCOL2 Gnd RCOL4 Gnd RROW1 Gnd NC Gnd RCTM Gnd RCTMN Gnd RDQA0 Gnd RDQA2 Gnd RDQA4 Gnd RDQA6 Gnd RDQA8 Gnd Pin B47 B48 B49 B50 B51 B52 B53 B54 B55 B56 B57 B58 B59 B60 B61 B62 B63 B64 B65 B66 B67 B68 B69 B70 B71 B72 B73 B74 B75 B76 B77 B78 B79 B80 B81 B82 B83 B84 B85 B86 B87 B88 B89 B90 B91 B92 Pin Name NC NC NC NC Vref Gnd SA0 Vdd SA1 SVdd SA2 Vdd RCMD Gnd RDQB8 Gnd RDQB6 Gnd RDQB4 Gnd RDQB2 Gnd RDQB0 Gnd RC.


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