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MRF21030R3

Part Number	MRF21030R3
Manufacturer	Motorola
Description	RF POWER FIELD EFFECT TRANSISTORS
Published	Jan 16, 2006
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF21030/D The RF MOSFET Line RF Power Field Effect Tra...
Datasheet	MRF21030R3 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF21030/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.
0 to 2.
2 GHz.
Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN–PCS/cellular radio and WLL applications.
• Wideband CDMA Performance: –45 dB ACPR @ 4.
096 MHz, 28 Volts Output Power — 3.
5 Watts Power Gain — 14 dB Efficiency — 15% • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 28 Vdc...

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