INF8594E

w e e 512 x 8-bithCMOS EEPROMS with I2CS bus Interface a at The .DINF8594E is а 4-Kbit (512 х 8-bit) floating gate electrically erasable programmable read only memory (ЕЕРPROM). By using an internal redundant w storage code it is fault tolerant to single bit errors. This feature dramatically w increases reliability compared to conventional ЕЕРRОМ memories. Power consumption is low due to the full СМОS technology used. The programming voltage 1s generated on-chip, using а voltage multiplier. As data bytes are received and transmitted via the serial I2C-bus, а package using eight pins is sufficient. Up to four INF8594E devices may be connected to the Ic-bus. Chip select is accomplished by two address inputs. Timing of the Erase/Write cycle is done internally, thus no external components are required. Pin 7 must be connected to either VDD or left open-circuit. There is an option of using an external clock or timing the length of an Erase/Write cycle. A write protection input (pin 1) allows disable of write-commands from the master by а hardware signal. When pin 1 is HIGH and one of the upper 256 ЕЕРRОМ cells is addressed, then the data bytes will not be acknowledged by the INF8594E and the ЕЕРRОМ contents are not changed. U 4 t m o .c TECHNICAL DATA INF8594E PIN ASSIGNMENT Low Power CMOS maximum active current 2.5 mА maximum standby current 10 µA Non-volatile storage of 4-Kbits organized as two pages each 256 х 8-bits Only one power supply required On-chip volta...