(ST-1MLA/B) Photo transistors(high-sensitivity NPN silicon phototransistors mounted)
Photo transistors
K O D E N S H I
ST-1MLA °§ST-1MLB
DIMENSIONS
The ST-1MLA and 1MLB are high-sensitivity NPN silicon p...
Photo
transistors
K O D E N S H I
ST-1MLA °§ST-1MLB
DIMENSIONS
The ST-1MLA and 1MLB are high-sensitivity
NPN silicon photo
transistors mounted in TO-18 Type header with clear epoxy encapsulation. The photo
transistors have a wide angular response and relatively low-cost compared to TO-18 can type devices.
(Unit : mm)
FEATURES
¶UWide angular response ¶URelatively low-cost against metal can package ¶ULow profile package ¶UTwo leads (Collector, Emitter) ST-1MLA ¶UThree leads (Collector, Emitter, Base) ST-1MLB
APPLICATIONS
¶UOptical counters ¶UInfrared sensors ¶UCamera stroboscopes ST-1MLA ST-1MLB
MAXIMUM RATINGS
Item
C-E voltage E-C voltage Collector current Collector power dissipation Operating temp. Storage Temp. *1 Soldering temp.
(Ta=2°…) 5
Symbol
VCEO VECO C I PC Topr. Tstg. Tsol.
Rating
40 4 30 100 -25~+90 -30~+100 260
Unit
V V mA mW °… °… °…
*1. For MAX.5 seconds at the position of 2 mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
Item
Collector dark current Light current C-E saturation voltage Rise time Switching speeds Fall time Spectral sensitivity Peak wavelength Half anglee
(Ta=2° 5…)
Symbol
CEO I L I VCE(sat) tr tf Î Îp °‚Ë
Conditions
VCEO=10V *2 VCE=10V, 200lx *2 C=2mA, 2,000lx I VCC=10V, CI =5mA, ÿ RL=100
Min.
0.5
Typ.
1 2.0 0.2 8 10 500~1,050 880 °æ 70
Max.
200 5.0 0.4
Unit.
nA mA V Ï sec. Ï sec. nm nm deg.
*2. Color temp.=2856K standard Tungsten lamp
- 1-
Photo
transistors
ST-1MLA °§ST-1MLB
Collector current Vs. Collector - Emitter...