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ST-1CL3H

KODENSHI

Photo transistors(high sensitivity NPN silicon phototransistor mounted)

Photo transistors K O D E N S H I ST-1CL3H DIMENSIONS The ST-1CL3H is a high sensitivity NPN silicon phototransistor m...


KODENSHI

ST-1CL3H

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Description
Photo transistors K O D E N S H I ST-1CL3H DIMENSIONS The ST-1CL3H is a high sensitivity NPN silicon phototransistor mounted in a 3©™low-cost ceramic package, designed for use as low-cost detector array in consumer and industrial applications. (Unit : mm) FEATURES ¶UCompact (©™ 3mm) ¶UWide angular response ¶U Low-cost APPLICATIONS ¶UOptical counters ¶UOptical detectors ¶UFloppy disk drives ¶U Encoders MAXIMUM RATINGS Item C-E voltage E-C voltage Collector current Collector power dissipation Operating temp. Storage Temp. *1 Soldering temp. (Ta=2°…) 5 Symbol VCEO VECO C I PC Topr. Tstg. Tsol. Rating 20 5 20 75 -20~+90 -30~+100 260 Unit V V mA mW °… °… °… *1. For MAX.5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Collector dark current Light current C-E saturation voltage Rise time Switching speeds Fall time Spectral sensitivity Peak wavelength Half anglee (Ta=2° 5…) Symbol CEO I L I VCE(sat) tr tf Î Îp °‚Ë Conditions VCEO=10V *2 VCE=3V, 1,000lx *2 C=0.2mA, 2,000lx I VCC=10V, CI =1mA, ÿ RL=100 Min. 0.1 Typ. 1 1.5 0.15 2.5 3.8 480~1,000 800 °æ 50 Max. 200 10 0.4 Unit. nA mA V Ï sec. Ï sec. nm nm deg. *2. Color temp.=2856K standard Tungsten lamp - 1- Photo transistors ST-1CL3H Collector current Vs. Collector - Emitter voltage Collector current Vs. Illuminance Dark current Vs. Ambient temperature Relative sensitivity Vs. Wavelength Swithing time Vs. Load resistance Radiant Pattern Collector power dissipatio...




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