Photo transistors
K O D E N S H I
ST-1CL3H
DIMENSIONS
The ST-1CL3H is a high sensitivity NPN silicon phototransistor m...
Photo
transistors
K O D E N S H I
ST-1CL3H
DIMENSIONS
The ST-1CL3H is a high sensitivity
NPN silicon photo
transistor mounted in a 3©™low-cost ceramic package, designed for use as low-cost detector array in consumer and industrial applications.
(Unit : mm)
FEATURES
¶UCompact (©™ 3mm) ¶UWide angular response ¶U Low-cost
APPLICATIONS
¶UOptical counters ¶UOptical detectors ¶UFloppy disk drives ¶U Encoders
MAXIMUM RATINGS
Item
C-E voltage E-C voltage Collector current Collector power dissipation Operating temp. Storage Temp. *1 Soldering temp.
(Ta=2°…) 5
Symbol
VCEO VECO C I PC Topr. Tstg. Tsol.
Rating
20 5 20 75 -20~+90 -30~+100 260
Unit
V V mA mW °… °… °…
*1. For MAX.5 seconds at the position of 2 mm from the package
ELECTRO-OPTICAL CHARACTERISTICS
Item
Collector dark current Light current C-E saturation voltage Rise time Switching speeds Fall time Spectral sensitivity Peak wavelength Half anglee
(Ta=2° 5…)
Symbol
CEO I L I VCE(sat) tr tf Î Îp °‚Ë
Conditions
VCEO=10V *2 VCE=3V, 1,000lx *2 C=0.2mA, 2,000lx I VCC=10V, CI =1mA, ÿ RL=100
Min.
0.1
Typ.
1 1.5 0.15 2.5 3.8 480~1,000 800 °æ 50
Max.
200 10 0.4
Unit.
nA mA V Ï sec. Ï sec. nm nm deg.
*2. Color temp.=2856K standard Tungsten lamp
- 1-
Photo
transistors
ST-1CL3H
Collector current Vs. Collector - Emitter voltage
Collector current Vs. Illuminance
Dark current Vs. Ambient temperature
Relative sensitivity Vs. Wavelength
Swithing time Vs. Load resistance
Radiant Pattern
Collector power dissipatio...