DatasheetsPDF.com

FLM5964-4F

Part Number	FLM5964-4F
Manufacturer	Eudyna Devices
Description	C-Band Internally Matched FET
Published	Jan 12, 2006
Detailed Description	wEudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. Item Drain-Sou...
Datasheet	FLM5964-4F PDF File

Overview

wEudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Condition m C-Band Internally Matched FET o FEATURES .
c • High Output Power: P1dB = 36.
5dBm (Typ.
) U • High Gain: G1dB =10.
0dB (Typ.
) 4 t • High PAE: ηadd = 37% (Typ.
) e = 25.
5dBm • Low IM3 = -46dBc@Po e • Broad Band: 5.
9h ~ 6.
4GHz S • Impedance Matched Zin/Zout = 50Ω aSealed Package t • Hermetically a DESCRIPTION D .
The FLM5964-4F is a power GaAs FET that is internally matched for w standard communication bands to provide optimum power and gain in a ...

Similar Datasheet

FLM5964-12DA Internally Matched Power GaAs FETs - Fujitsu
FLM5964-12F C-Band Internally Matched FET - Fujitsu
FLM5964-12F C-Band Internally Matched FET - Eudyna Devices
FLM5964-12F C-Band Internally Matched FET - SUMITOMO
FLM5964-12F-001 C-Band Internally Matched FET - SUMITOMO
FLM5964-18DA Internally Matched Power GaAs FETs - Fujitsu
FLM5964-18F C-Band Internally Matched FET - Fujitsu
FLM5964-18F C-Band Internally Matched FET - Eudyna Devices
FLM5964-18F C-Band Internally Matched FET - SUMITOMO
FLM5964-25DA Internally Matched Power GaAs FETs - Fujitsu

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)