SPU03N60S5

Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance SPU03N60S5 SPD03N60S5 VDS RDS(on) ID PG-TO252 600 V 1.4 Ω 3.2 A PG-TO251 2 3 1 3 2 1 Type SPU03N60S5 SPD03N60S5 Package PG-TO251 PG-TO252 Ordering Code Q67040-S4227 Q67040-S4187 Marking 03N60S5 03N60S5 Maximum Ratings Parameter Symbol Continuous drain current ID TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse EAS ID = 2.4 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 3.2 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax IAR Gate source voltage VGS Gate source voltage AC (f >1Hz) VGS Power dissipation, TC = 25°C Ptot Operating and storage temperature Tj , Tstg Value 3.2 2 5.7 100 0.2 3.2 ±20 ±30 38 -55... +150 Unit A mJ A V W °C Rev. 2.5 Page 1 2008-04-07 SPU03N60S5 SPD03N60S5 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 3.2 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, *) 1.6 mm (0.063 in.) from case for 10s Symbol dv/dt Value 20 Unit V/ns Symbol RthJC RthJA RthJA Tsold Values Unit min. typ. max. - - 3.3 K/W - - 75 ...