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STTA3006P Dataheets PDF



Part Number STTA3006P
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description (STTA3006xx) TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
Datasheet STTA3006P DatasheetSTTA3006P Datasheet (PDF)

® STTA3006P/PI STTA6006TV1/2 TURBOSWITCH ™ ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) FEATURES AND BENEFITS SPECIFICTO”FREEWHEELMODE”OPERATIONS: FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR HIGH FREQUENCY OPERATIONS INSULATED PACKAGE : ISOTOP & DOP3I Electrical insulation : 2500VRMS Capacitance < 12 pF (DOP3I) Capacitance < 45 pF (ISOTOP) DESCRIPTION The TURBOS.

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® STTA3006P/PI STTA6006TV1/2 TURBOSWITCH ™ ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) FEATURES AND BENEFITS SPECIFICTO”FREEWHEELMODE”OPERATIONS: FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR HIGH FREQUENCY OPERATIONS INSULATED PACKAGE : ISOTOP & DOP3I Electrical insulation : 2500VRMS Capacitance < 12 pF (DOP3I) Capacitance < 45 pF (ISOTOP) DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V. TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all ”freewheel mode” operations and is particularly suitable and efficient in motor control freewheel applications and in boosterdiode applications in power factor control circuitries. Packaged either in ISOTOP, DOP3I or SOD93 these 600V devices are particularly intended for use on 240V domestic mains. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM VRSM IF(RMS) IFRM IFSM Tj T stg Parameter Repetitive peak reverse voltage Non repetitive peak reverse voltage RMS forward current Repetitive peak forward current Surge non repetitive forward current Storage temperature range tp=5µs F=5kHz square tp=10 ms sinusoidal Value 600 600 50 300 230 150 -65 to 150 Unit V V A A A °C °C 1/9 K 30A / 2 x 30A 600V 35ns 1.5V K2 A2 A2 K1 K1 A1 K2 A1 STTA6006TV1 STTA6006TV2 ISOTOPTM A K K A SOD93 STTA3006P DOP3I STTA3006PI Maximum operating junction temperature TM : TURBOSWITCH is a trademark of STMicroelectronics November 1999 - Ed: 4C STTA6006TV1/2/ STTA3006P/PI THERMAL AND POWER DATA (Per diode) Symbol Rth(j-c) Parameter Junction to case thermal resistance Test conditions ISOTOP DOP3I SOD93 Rth(c) P1 Conduction power dissipation IF(AV) = 30A δ =0.5 Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) ISOTOP ISOTOP DOP3I SOD93 Pmax ISOTOP DOP3I SOD93 Coupling Tc= 74°C Tc= 52°C Tc= 85°C Tc= 66°C Tc= 42°C Tc= 78°C 60 W Per diode Total Value 1.4 0.75 1.8 1.2 0.1 54 °C/W W Unit °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol VF * IR ** Parameter Forward voltage drop Reverse leakage current Threshold voltage Dynamic resistance * tp = 380 µs, δ < 2% ** tp = 5 ms, δ < 2% Test conditions IF =30A VR =0.8 × VRRM Ip < 3.IAV Tj = 25°C Tj = 125 °C Tj = 25°C Tj = 125 °C Tj = 125 °C Min Typ 1.25 3 Max 1.75 1.5 150 8 1.15 11 Unit V V µA mA V mΩ Vto rd Test pulses : To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr Parameter Reverse recovery time Maximum reverse recovery current Softness factor Test conditions Tj = 25°C Irr = 0.25A IF = 0.5 A IR = 1A IF = 1 A dIF/dt =-50A/µs VR =30V Tj = 125 °C VR = 400V dIF/dt = -240 A/µs dIF/dt = -500 A/µs Tj = 125 °C VR = 400V dIF/dt = -500 A/µs IF =30A 19 20 IF =30A 0.40 Min Typ 35 65 A Max Unit ns IRM S factor 2/9 STTA6006TV1/2 / STTA3006P/PI TURN-ON SWITCHING Symbol t fr Parameter Forward recovery time Test conditions Tj = 25°C IF =30A, dIF/dt = 240 A/µs measured at, 1.1 × VFmax Min Typ Max 600 V 12 Unit ns VFp Peak forward voltage Tj = 25°C IF =30A, dIF/dt = 240 A/µs Fig. 1: Conduction losses versus average current. P1(W) 60 Fig. 2: Forward voltage drop versus forward current. VFM(V) 3.50 T 50 40 30 =0.1 MAXIMUM VALUES 3.00 2.50 2.00 =1 =tp/T tp Tj=125 oC 1.50 1.00 20 10 0 0 2 4 6 = 0. 2 =0.5 0.50 IF(av)(A) 8 10 12 14 16 18 20 22 24 26 28 30 IFM(A) 0.00 0.1 1 10 100 Fig. 3: Relative variation of thermal transient impedance junction to case versus pulse duration. Fig. 4: Peak reverse recovery current versus dIF/dt. IRM(A) 45 40 35 30 25 20 15 10 5 0 0 dIF/dt(A/ s) I F=15A I F= 30A 90% CONFIDENCE Tj=125oC VR=400V IF=60A 100 200 300 400 500 600 700 800 900 1000 3/9 STTA6006TV1/2/ STTA3006P/PI Fig. 5: Reverse recovery time versus dIF/dt. trr(ns) 250 90% CONFIDENCE Tj=125 oC 225 VR= 400V 200 175 I F=60A 150 IF=30A 125 100 75 IF=15A 50 25 dIF/dt( A/ s) 0 0 100 200 300 400 500 600 700 800 900 1000 Fig. 6: Softness factor (tb/ta) versus dIF/dt. S factor 0.90 Typical values Tj=125 oC 0.85 0.80 IF<2xI F( av) 0.75 VR=400V 0.70 0.65 0.60 0.55 0.50 0.45 0.40 0.35 0.30 0.25 dIF/dt(A/ s) 0.20 0 100 200 300 400 500 600 700 800 900 1000 Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference Tj=125°C). 3.25 3.00 2.75 2.50 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0 Fig. 8: Transient peak forward voltage versus dIF/dt. VFP(V) 16 15 90% CONFIDENCE Tj=125 oC 14 IF=IF(av) 13 12 11 10 9 8 7 6 5 4 3 2 1 dIF/dt(A/ s) 0 0 100 200 300 400 S factor IRM Tj(oC) 25 50 75 100 125 150 500 600 Fig. 9: Forward recovery time versus dIF/dt. tfr(ns) 600 550 500 450 400 350 300 250 200 150 100 50 0 0 100 90% CONFIDENCE Tj=125oC VFr=1.1*VF max. IF =IF (av) dIF/dt(A/ s) 200 300 400 500 600 4/9 STTA6006TV1/2 / STTA3006.


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