SSW108

Product Description Stanford Microdevices’ SSW-108 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable small outline plastic package. This single-pole, double-throw, non-reflective switch consumes less than 50uA and operates at -5V and 0V for control bias. Its high isolation and low insertion loss makes it ideal for T/R switching in analog and digital wireless communication systems. The die is fabricated using 0.5 micron FET process with gold metallization and silicon nitride passivation to achieve excellent performance and reliability. SSW-108 DC-4 GHz High Isolation GaAs MMIC SPDT Switch Isolation vs. Frequency VControl = -5 V -20 -30 -40 dB -50 -60 -70 D C 1 2 3 4 Product Features High Isolation: 32dB at 2GHz Low DC Power Consumption Non-reflective Broadband Performance - True DC Operation Low Cost Small Outline Plastic Package Applications Analog/Digital Wireless System Spread Spectrum GPS Switches GHz Electrical Specifications at Ta = 25C Sym bol In s P a r a m e te r s : T e s t C o n d itio n s In s e r tio n L o s s U n its M in . Ty p . 0 .8 0 .9 1 .4 30 22 40 35 25 1 .1 5 1 .2 5 1 .5 0 1 .1 5 1 .2 5 1 .5 0 dBm dBm dBm dBm uA nsec +26 +29 +45 +48 40 3 M ax. 1 .3 1 .4 f = 0 .0 5 -1 .0 G H z f = 1 .0 -2 .0 G H z f = 2 .0 -4 .0 G H z f = 0 .0 5 -1 .0 G H z f = 1 .0 -2 .0 G H z f = 2 .0 -4 .0 G H z f = 0 .0 5 -1 .0 G H z f = 1 .0 -2 .0 G H z f = 2 .0 -4 .0 G H z f = 0 .0 5 -1 .0 G H z f ...