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MRF18060BLSR3

Part Number	MRF18060BLSR3
Manufacturer	Motorola
Description	RF Power Field Effect Transistors
Published	Jan 2, 2006
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF18060B/D The RF MOSFET...
Datasheet	MRF18060BLSR3 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.
Order this document by MRF18060B/D The RF MOSFET Line RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from 1.
8 to 2.
0 GHz.
Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
Specified for GSM1930 - 1990 MHz.
• GSM Performance, Full Frequency Band (1930 - 1990 MHz) Power Gain — 13 dB (Typ) @ 60 Watts CW Efficiency — 45% (Typ) @ 60 Watts CW • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed f...

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